VGF InP (100) undoped, 2" x 0.35 mm wafer, 1sp - IPUa50D035C1US LaAlO3
$402.50
Description
VGF InP (100) undoped, 2" x 0.35 mm wafer, 1sp - IPUa50D035C1US LaAlO3InP single crystal wafer Orientation: (100) Size: 2" diameter x 0. 35 mm Doping: Undoped Conducting type: S C Polish: one side polished Resistivity: (1. 8 3. 05) x 10^ 1 ohm. cm Mobility: (4100 4340) cm^2 V. S EPD: <5000 cm^2 Carrier Concerntration: (4. 72 8. 27) x 10^15 cmE 3
Conductivity @800: >0
The customer can connect KF-16 bellows vacuum hose to the pump to increase exhaust rate and achieve higher vacuum degree < 50 mtorr
Spin Speed
Crystal Structure /lattice constant M
Dimension: 100 mm x 100mm x 0
Furnace Feature
Limit: 70 centigrade
Mobility: (3330-3850) cm^2/V
Nickel Foam for Battery Cathode Substrate (300mm length x 80mm width x 0
Package: Clean and Packed in 1000 class clean room
Thickness: 2
Size: 1 x 1 x 0
Shipping Notes
- Free Standard Shipping on $100+ Orders to the USA.
- Except Preorder products are shipped in 48 hours.
- Delivery to the USA:
- Standard Shipping : 3-10 business days
- If time is of the essence, please consider selecting expedited delivery for faster service.
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